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APTGF330SK60D3G
Buck Chopper NPT IGBT Power Module
VCES = 600V IC = 330A @ Tc = 80C
Q1 4 5
3
Application * AC and DC motor control * Switched Mode Power Supplies Features * Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * High level of integration * M6 power connectors Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
1
2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 600 520 330 800 20 1560 800A @ 520V Unit V
September, 2008 1-5 APTGF330SK60D3G - Rev 1
A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF330SK60D3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE = 15V IC = 400A Tj = 125C VGE = VCE , IC = 7.5 mA VGE = 20V, VCE = 0V Min Typ 1.95 2.2 5.8 Max 500 2.45 6.5
1200
Unit A V V nA
5.0
Dynamic Characteristics
Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Test Conditions VGE = 0V ; VCE = 25V f = 1MHz VGE=15V, IC=400A VCE=300V Inductive Switching (25C) VGE = 15V VBus = 300V IC = 400A RG = 8 Inductive Switching (125C) VGE = 15V VBus = 300V IC = 400A RG = 8 VGE = 15V Tj = 125C VBus = 300V IC = 400A Tj = 125C RG = 8 VGE 15V ; VBus = 360V tp 10s ; Tj = 125C Min Typ 18 1.6 1.3 150 72 530 40 160 75 550 50 18 mJ 17 1800 A ns Max Unit nF C
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 400A VR = 300V IF = 400A VGE = 0V Test Conditions VR = 600V Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 600 Typ Max 750 1000 400 1.25 1.2 150 250 27 44 5.6 9.2 1.6 Unit V A A V ns C mJ
September, 2008 2-5 APTGF330SK60D3G - Rev 1
di/dt =4400A/s
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APTGF330SK60D3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight For terminals To Heatsink M6 M6 IGBT Diode 2500 -40 -40 -40 3 3 Min Typ Max 0.08 0.15 150 125 125 5 5 350 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
D3 Package outline (dimensions in mm)
1
A
DETAIL A
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APTGF330SK60D3G - Rev 1
September, 2008
APTGF330SK60D3G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 800
TJ = 125C VGE=15V VGE=12V
800
TJ=25C
600
IC (A) IC (A)
TJ=125C
600
VGE=20V
400
400
VGE=9V
200
200
0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5
0 0 1 2 3 VCE (V) 4 5
800
Transfert Characteristics 40 30 E (mJ) 20 10
TJ=25C
Energy losses vs Collector Current
VCE = 300V VGE = 15V RG = 8 TJ = 125C Eon
600 IC (A)
Eoff
400
TJ=125C
200
Err
0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 50 40 E (mJ) 30 20 10 0 0 10 20 30 Gate Resistance (ohms) 40
VCE = 300V VGE =15V IC = 400A TJ = 125C Eon
0 0 200 400 IC (A) 600 800
1000 800
Eoff
Reverse Safe Operating Area
IC (A)
600 400 200
VGE=15V TJ=125C RG=8
Err
0 0 100 200 300 VCE (V) 400 500 600
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.09 Thermal Impedance (C/W) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
IGBT
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4-5
APTGF330SK60D3G - Rev 1
September, 2008
APTGF330SK60D3G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 70 60 50 40 30 20 10 0 0 100 200 300 IC (A) 400 500 0 0 0.3 0.6 0.9 VF (V) 1.2 1.5
hard switching ZVS VCE=300V D=50% RG=8 TJ=125C TC=75C ZCS
Forward Characteristic of diode 800
600 IF (A)
400
TJ=125C
200
TJ=25C
0.1 Thermal Impedance (C/W) 0.08 0.06 0.04 0.02
0.9 0.7 0.5 0.3 0.1 0.05
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Diode
Single Pulse
0 0.00001
0.0001
0.001 0.01 0.1 rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGF330SK60D3G - Rev 1
September, 2008

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